ELECTRONIC PROPERTIES VERSUS COMPOSITION OF THIN FILMS OF CUINSE2

被引：230

作者：

NOUFI, R

AXTON, R

HERRINGTON, C

DEB, SK

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：668 / 670

页数：3

共 10 条

[1]

CHEN WS, 1981, P SOC PHOTO-OPT INST, V248, P62

[2]

HSIAO R, 1983, MAY POL THIN FILM RE, P25

[3]

MEESE JM, 1975, B AM PHYS SOC, V20, P696

[4]

Mickelsen R. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P800

[5]

NEUMANN H, 1981, CRYST RES TECHNOL, V16, P1369

[6]

Shay J. L., 1975, 11th IEEE Photovoltaic Specialists Conference, P503

[7]

Shay J L, 1975, TERNARY CHALCOPYRITE, P112

[8] CULNSE2-CDS HETEROJUNCTION PHOTOVOLTAIC DETECTORS [J].

WAGNER, S ;

SHAY, JL ;

MIGLIORATO, P ;

KASPER, HM .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :434-435

[9]

WAGNER S, 1983, 2 SOL EN RES I Q PRO

[10] ELECTROLUMINESCENCE AND PHOTOVOLTAIC DETECTION IN CD-IMPLANTED CULNSE2 P-N-JUNCTION DIODES [J].

YU, PW ;

PARK, YS ;

FAILE, SP ;

EHRET, JE .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :717-719

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