MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：59

作者：

SHIBATA, J

NAKAO, I

SASAI, Y

KIMURA, S

HASE, N

SERIZAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.95205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：191 / 193

页数：3

共 7 条

[1]

INOUE K, 1983 IOOC TOK, P186

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KOREN, U ;

YU, KL ;

CHEN, TR ;

BARCHAIM, N ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :643-645

[3]

KOREN U, 1982, IEEE J QUANTUM ELECT, V18, P1653, DOI 10.1109/TMTT.1982.1131303

[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[5] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[6]

MATSUEDA H, 1983, J LIGHTWAVE TECHNOL, V1, P368

[7] MONOLITHIC INTEGRATION OF AN ALGAAS GAAS DH LED WITH A GAAS-FET DRIVER [J].

WADA, O ;

SANADA, T ;

SAKURAI, T .

ELECTRON DEVICE LETTERS, 1982, 3 (10) :305-307

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