ELECTRICAL MEASUREMENTS OF MOLECULAR-BEAM EPITAXY HGTE-CDTE SUPERLATTICES AND ABSORPTION-COEFFICIENT ANALYSIS OF MOLECULAR-BEAM EPITAXY HGTE

被引：19

作者：

GOODWIN, MW ^{[1
]}

KINCH, MA ^{[1
]}

KOESTNER, RJ ^{[1
]}

CHEN, MC ^{[1
]}

SEILER, DG ^{[1
]}

JUSTICE, RJ ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DENTON,TX 76203

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574227

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3110 / 3114

页数：5

共 19 条

[1] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1982, 25 (12) :7584-7597

[2] MAGNETOOPTICAL DETERMINATION OF THE HGTE-CDTE SUPERLATTICE BAND-STRUCTURE [J].

BERROIR, JM ;

GULDNER, Y ;

VIEREN, JP ;

VOOS, M .

PHYSICAL REVIEW B, 1986, 34 (02) :891-894

[3]

Dornhaus R, 1976, SPRINGER TRACTS MODE, V78, P1

[4] THE ELECTRICAL AND THERMOELECTRICAL PROPERTIES OF HGTE IN THE TEMPERATURE RANGE OF INTRINSIC CONDUCTIVITY [J].

DZIUBA, Z ;

ZAKRZEWSKI, T .

PHYSICA STATUS SOLIDI, 1964, 7 (03) :1019-1025

[5] IMPURITY BAND CONDUCTION IN HGTE .1. EXPERIMENTAL-DATA [J].

DZIUBA, Z .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (02) :531-540

[6] PRESENT STATUS OF MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF HGTE-CDTE SUPERLATTICES [J].

FAURIE, JP ;

SIVANANTHAN, S ;

RENO, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2096-2100

[7] CDTE-HGTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

PIAGUET, J .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :713-715

[8] CALCULATED TEMPERATURE-DEPENDENCE OF THE BAND-GAP OF HGTE-CDTE SUPERLATTICES [J].

GULDNER, Y ;

BASTARD, G ;

VOOS, M .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1403-1405

[9] MAGNETO-OPTICAL INVESTIGATIONS OF A NOVEL SUPER-LATTICE - HGTE-CDTE [J].

GULDNER, Y ;

BASTARD, G ;

VIEREN, JP ;

VOOS, M ;

FAURIE, JP ;

MILLION, A .

PHYSICAL REVIEW LETTERS, 1983, 51 (10) :907-910

[10]

IVANOVOMSKII VI, 1967, SOV PHYS SEMICOND+, V1, P232

← 1 2 →