DEPTH PROFILE OF THERMAL DONOR IN BORON-DOPED CZOCHRALSKI-GROWN SILICON

被引：3

作者：

FILANGERI, EM ^{[1
]}

NISHIDA, T ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,FLORIDA SOLID STATE ELECTR LAB,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-complete suppression of thermal donor formation is observed at the silicon surface independent of annealing time. Schottky barrier capacitance-voltage profiling of p-type Czochralski silicon following heat treatment at 200-450-degrees-C in N2 indicates thermal donor depletion near the surface consistent with earlier reports. Analysis of the capacitance-voltage method indicates that series resistance effects on the depth profile are negligible. Possible mechanisms for the thermal donor depletion at the silicon surface are discussed.

引用

页码：7931 / 7934

页数：4

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