PREPARATION AND ELECTRICAL-PROPERTIES OF LANTHANUM-DOPED LEAD TITANATE THIN-FILMS BY SOL-GEL PROCESSING

被引：36

作者：

SHIMIZU, Y

UDAYAKUMAR, KR

CROSS, LE

机构：

[1] Materials Research Laboratory, Pennsylvania State University, University Park, Pennsylvania

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 12期

关键词：

LEAD TITANATE; SOL-GEL; THIN FILMS; LANTHANUM; PROCESSING;

D O I：

10.1111/j.1151-2916.1991.tb04296.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lanthanum-doped lead titanate thin films have been prepared by sol-gel processing. These studies reveal the structural and electrical properties of 18 mol% La-doped PbTiO3 thin films to be dependent on the annealing conditions. With appropriate annealing conditions, a relative dielectric constant of about 900 was obtained, comparable to the bulk composition.

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页码：3023 / 3027

页数：5

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