ELECTRONIC RAMAN-SCATTERING IN HEAVILY DOPED P-TYPE GERMANIUM

被引：21

作者：

WAGNER, J ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.8071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8071 / 8077

页数：7

共 29 条

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