ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON

被引：54

作者：

EVWARAYE, AO ^{[1
]}

机构：

[1] GE,RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：734 / 738

页数：5

共 22 条

[1]

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