TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：46
作者：
HWANG, JCM [1 ]
KASTALSKY, A [1 ]
STORMER, HL [1 ]
KERAMIDAS, VG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期
关键词：
D O I：
10.1063/1.94891
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：802 / 804
页数：3
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