LOW-TEMPERATURE (350-DEGREES-C) GROWTH OF ALGAAS/GAAS LASER DIODE BY MIGRATION ENHANCED EPITAXY

被引：16
作者：
ASAI, M
SATO, F
IMAMOTO, H
IMANAKA, K
SHIMURA, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期
关键词：
D O I：
10.1063/1.341211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：432 / 434
页数：3
相关论文
共 4 条
[1]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[2]   LOW CURRENT THRESHOLD ALGAAS VISIBLE LASER-DIODES WITH AN (ALGAAS)M(GAAS)N SUPERLATTICE QUANTUM-WELL [J].
HAYAKAWA, T ;
SUYAMA, T ;
TAKAHASHI, K ;
KONDO, M ;
YAMAMOTO, S ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :636-638
[3]   LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].
HORIKOSHI, Y ;
KAWASHIMA, M ;
YAMAGUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870
[4]   PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J].
HORIKOSHI, Y ;
KAWASHIMA, M ;
YAMAGUCHI, H .
APPLIED PHYSICS LETTERS, 1987, 50 (23) :1686-1687
1