SEMIEMPIRICAL MODEL FOR THE THRESHOLD VOLTAGE OF A DOUBLE IMPLANTED MOSFET AND ITS TEMPERATURE-DEPENDENCE

被引：30
作者：
ARORA, ND
机构：
[1] Digital Equipment Corp, Hudson, MA,, USA, Digital Equipment Corp, Hudson, MA, USA
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 05期
关键词：
D O I：
10.1016/0038-1101(87)90212-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
25
引用
收藏
页码：559 / 569
页数：11
相关论文
共 25 条
[1]   A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT [J].
AKERS, LA ;
BEGUWALA, MME ;
CUSTODE, FZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1490-1495
[2]   THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].
AKERS, LA ;
SANCHEZ, JJ .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :621-641
[3]   CALCULATION OF THRESHOLD VOLTAGE IN NONUNIFORMLY DOPED MOSFETS [J].
ANTONIADIS, DA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :303-307
[4]   GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].
BREWS, JR ;
FICHTNER, W ;
NICOLLIAN, EH ;
SZE, SM .
ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4
[5]   THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS [J].
BREWS, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1696-1710
[6]   DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET [J].
CHAO, CS ;
AKERS, LA ;
PATTANAYAK, DN .
SOLID-STATE ELECTRONICS, 1983, 26 (09) :851-860
[7]   A DYNAMIC AVERAGE MODEL FOR THE BODY EFFECT IN ION-IMPLANTED SHORT CHANNEL (L=1MU-META) MOSFETS [J].
CHATTERJEE, PK ;
LEISS, JE ;
TAYLOR, GW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :606-607
[8]  
DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436
[9]   MEASUREMENT OF MOSFET CONSTANTS [J].
DELAMONEDA, FH ;
KOTECHA, HN ;
SHATZKES, M .
ELECTRON DEVICE LETTERS, 1982, 3 (01) :10-12
[10]   DEVICE MODELING [J].
ENGL, WL ;
DIRKS, HK ;
MEINERZHAGEN, B .
PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33
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