PHOTOLUMINESCENCE QUENCHING IN A POLYMER THIN-FILM FIELD-EFFECT LUMINISTOR

被引：78

作者：

DYREKLEV, P ^{[1
]}

INGANAS, O ^{[1
]}

PALOHEIMO, J ^{[1
]}

STUBB, H ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,SF-02150 ESPOO,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.351010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of photoluminescence quenching in thin films of poly(3-hexylthiophene) and Langmuir-Blodgett films of poly(3-hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.

引用

页码：2816 / 2820

页数：5

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