BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI

[1] THE FORMATION OF BETA-SIC ON SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 669 - 683

[2] de Ridder R., 1970, Physica Status Solidi, V42, P645, DOI 10.1002/pssb.19700420218

[3] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[4] FORMATION OF EPITAXIAL BETA-SIC FILMS ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1969, 15 (12) : 410 - &

[5] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] CHEMICAL VAPOR-DEPOSITION OF SINGLE-CRYSTALLINE ZNO FILM WITH SMOOTH SURFACE ON INTERMEDIATELY SPUTTERED ZNO THIN-FILM ON SAPPHIRE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 773 - 778

[8] THERMAL-EXPANSION OF SOME DIAMOND-LIKE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 89 - 98

[9] SPITZER WG, 1959, INT C SILICON CARBID, P347

[10] SPRAGUE JA, 1975, 33RD P M EL MICR SOC, P162

[1] THE FORMATION OF BETA-SIC ON SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 669 - 683

[2] de Ridder R., 1970, Physica Status Solidi, V42, P645, DOI 10.1002/pssb.19700420218

[3] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[4] FORMATION OF EPITAXIAL BETA-SIC FILMS ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1969, 15 (12) : 410 - &

[5] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] CHEMICAL VAPOR-DEPOSITION OF SINGLE-CRYSTALLINE ZNO FILM WITH SMOOTH SURFACE ON INTERMEDIATELY SPUTTERED ZNO THIN-FILM ON SAPPHIRE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 773 - 778

[8] THERMAL-EXPANSION OF SOME DIAMOND-LIKE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 89 - 98

[9] SPITZER WG, 1959, INT C SILICON CARBID, P347

[10] SPRAGUE JA, 1975, 33RD P M EL MICR SOC, P162