EFFECT OF DEEP-LEVEL IMPURITIES ON THE OPEN-CIRCUIT VOLTAGE OF AN MIS SOLAR-CELL

被引：3
|
作者：
CHATTOPADHYAY, P [1 ]
DAS, K [1 ]
机构：
[1] INDIAN ASSOC CULTIVAT SCI, CALCUTTA 700032, W BENGAL, INDIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The open-circuit voltage of an MIS solar cell is studied considering the presence of deep-level impurities. An expression for open-circuit voltage is proposed, which reduces to the well known expression for open-circuit voltage of an ideal metal-semiconductor solar cell under some limiting conditions. The analysis predicts an enhancement of open-circuit voltage for donor-like deep impurities. However, it is shown that due to recombination at the deep centres a loss in open-circuit voltage might occur. The conditions required to reduce the recombination loss are discussed.
引用
收藏
页码：1605 / 1610
页数：6
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