NARROW SPECTRAL LINEWIDTH SEMICONDUCTOR-LASERS

被引：13
作者：
KUNII, T
MATSUI, Y
机构：
[1] Research and Development Group, Oki Electric Industry Co., Ltd., Tokyo, 193, 550-5 Higashiasakawa, Hachioji
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1992年 / 24卷 / 07期
关键词：
D O I：
10.1007/BF00620152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Developments of narrow-linewidth distributed-Bragg-reflection (DBR) and distributed-feed-back (DFB) lasers are described. The design of a narrow-linewidth DBR laser is described in detail. Kappa-L optimization from the viewpoint of narrow-linewidth operation and stable single mode operation is discussed. The linewidth dependences on cavity length, facet reflectivity and threshold current density are investigated. Some approaches to suppressing spatial hole burning in DFB lasers are described.
引用
收藏
页码：719 / 735
页数：17
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