SURFACE-STATES OBSERVED BY PHOTOEMISSION YIELD SPECTROSCOPY ON GAAS(001) SURFACES WITH DIFFERENT SUPERSTRUCTURES

被引：2
作者：
HIROSE, K [1 ]
UCHIYAMA, A [1 ]
NOGUCHI, T [1 ]
UDA, M [1 ]
机构：
[1] WASEDA UNIV,DEPT MAT SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1992年 / 56-8卷
关键词：
D O I：
10.1016/0169-4332(92)90207-E
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The energy distributions of the occupied surface states of GaAs(001) surfaces with several kinds of surface superstructure are measured using photoemission yield spectroscopy. The surfaces are prepared by molecular beam epitaxy. The surface states are found to change in both distribution and density depending on the surface superstructure and the surface preparation conditions. It is concluded that not all observed surface states originate from ordered surface atomic structures.
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页码：11 / 14
页数：4
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