MEASUREMENT OF STRESS GRADIENTS GENERATED BY ELECTROMIGRATION

被引:120
作者
BLECH, IA [1 ]
TAI, KL [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.89414
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:387 / 389
页数:3
相关论文
共 12 条
[1]   X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .3. INTENSITY DISTRIBUTION [J].
ANDO, Y ;
PATEL, JR ;
KATO, N .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4405-4412
[2]   STRESS GENERATION BY ELECTROMIGRATION [J].
BLECH, IA ;
HERRING, C .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :131-133
[3]   ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208
[4]   GRAIN-BOUNDARY SOLUTE ELECTROMIGRATION IN POLYCRYSTALLINE FILMS [J].
HO, PS ;
HOWARD, JK .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3229-3233
[5]  
HOFFMAN RW, 1966, PHYSICS THIN FILMS, V3
[6]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
[7]   X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS [J].
MEIERAN, ES ;
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3162-&
[8]   CURRENT-INDUCED MASS TRANSPORT IN ALUMINUM [J].
PENNEY, RV .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (03) :335-&
[9]   HEAT CAPACITY AND RESISTANCE MEASUREMENTS FOR ALUMINUM AND LEAD WIRES [J].
POCHAPSKY, TE .
ACTA METALLURGICA, 1953, 1 (06) :747-751
[10]  
SCHWUTTKE GH, 1966, J APPL PHYS, V39, P1581