CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY

被引:78
作者
CHO, AY [1 ]
DIXON, RW [1 ]
CASEY, HC [1 ]
HARTMAN, RL [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.88832
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:501 / 503
页数:3
相关论文
共 16 条
[1]  
ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
[2]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[3]   APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J].
CASEY, HC ;
CHO, AY ;
BARNES, PA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :467-470
[4]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[5]   FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&
[6]   GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC .
APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290
[7]   MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123
[8]   GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD [J].
CHO, AY .
APPLIED PHYSICS LETTERS, 1971, 19 (11) :467-&
[9]   THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].
DYMENT, JC ;
NASH, FR ;
HWANG, CJ ;
ROZGONYI, GA ;
HARTMAN, RL ;
MARCOS, HM ;
HASZKO, SE .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484
[10]  
DYMENT JC, 1972, P IEEE, V60, P762