QUALITATIVE AND QUANTITATIVE DIFFERENTIATION OF PARAMAGNETIC ANION-ANTISITE-RELATED SPECTRA IN GAAS

被引：4
作者：
GOLTZENE, A
SCHWAB, C
机构：
[1] Groupe Recherches Physiques Et Matériaux, Centre de Recherches Nucléaires, In2P3-C. N. R. S, Université Louis Pasteur, Strasbourg
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 160卷 / 02期
关键词：
D O I：
10.1002/pssb.2221600226
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electron paramagnetic resonance spectra related to the anion antisite in GaAs may be sorted out into two groups according to their behaviour under photoexcitation and microwave saturation. This qualitative separation is quantitatively supported by different values for the central hyperfine constant and for the component linewidth of the quadruplet spectrum usually modeled by an isolated As Ga4+ defect. These observations lead to reinvestigate the initial extrapolation, based on the isolated PGa centre in GaP, which results in the identification of the former quadruplet. It supports the existence of several antisite‐related defects likely differing by their first shell as in GaP. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：649 / 659
页数：11
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