EMITTER-BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：1
|
作者：
YOSHIDA, J [1 ]
KURATA, M [1 ]
OBARA, M [1 ]
MORIZUKA, K [1 ]
MASHITA, M [1 ]
HOJO, A [1 ]
机构：
[1] TOSHIBA CORP, TOSHIBA RES & DEV CTR, SAIWAI KU, KAWASAKI 210, JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期
关键词：
D O I：
10.1109/T-ED.1984.21873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1979 / 1979
页数：1
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