ANGLE-RESOLVED PHOTOEMISSION OF ALPHA-SN(111) AND THE POLAR (111) AND (111BAR) SURFACES OF INSB

被引：19
作者：
HERNANDEZCALDERON, I
HOCHST, H
机构：
来源：
SURFACE SCIENCE | 1985年 / 152卷 / APR期
关键词：
D O I：
10.1016/0039-6028(85)90518-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：1035 / 1041
页数：7
相关论文
共 20 条
[1]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[2]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[3]   PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL [J].
EASTMAN, DE ;
GROBMAN, WD ;
FREEOUF, JL ;
ERBUDAK, M .
PHYSICAL REVIEW B, 1974, 9 (08) :3473-3488
[4]   THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY [J].
FARROW, RFC ;
ROBERTSON, DS ;
WILLIAMS, GM ;
CULLIS, AG ;
JONES, GR ;
YOUNG, IM ;
DENNIS, PNJ .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :507-518
[5]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433
[6]   NEW METHOD FOR THE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - A-SN(001) AND INSB(001) SURFACES [J].
HERNANDEZCALDERON, I ;
HOCHST, H .
PHYSICAL REVIEW B, 1983, 27 (08) :4961-4965
[7]   EXPERIMENTAL-DETERMINATION OF BULK ENERGY-BAND DISPERSIONS [J].
HIMPSEL, FJ .
APPLIED OPTICS, 1980, 19 (23) :3964-3970
[8]   ANGULAR RESOLVED PHOTOEMISSION OF INSB(001) AND HETEROEPITAXIAL FILMS OF ALPHA-SN(001) [J].
HOCHST, H ;
HERNANDEZCALDERON, I .
SURFACE SCIENCE, 1983, 126 (1-3) :25-31
[9]  
HOCHST H, 1983, ANN ISRAEL PHYS SOC, V6, P333
[10]  
LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
12