NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES

被引：55

作者：

BASTERFIELD, J ^{[1
]}

SHANNON, JM ^{[1
]}

GILL, A ^{[1
]}

机构：

[1] MULLARD RES LABS,SOLID STATE PHYS DIV,CROSS OAK LANE,REDHILL RH 15HA,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(75)90063-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：290 / &

共 7 条

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[6]

WEBB PP, PRIVATE COMMUNICATIO

[7] CHARACTERISTICS OF ALUMINUM-SILICON SCHOTTKY BARRIER DIODE [J].

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