GROWTH AND CHARACTERIZATION OF COMPOUND SEMICONDUCTORS BY ATOMIC LAYER EPITAXY

被引：25

|

作者：

TISCHLER, MA

BEDAIR, SM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90287-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：89 / 94

页数：6

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