FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS

被引：32

作者：

ASANO, T

ISHIWARA, H

LEE, HC

TSUTSUI, K

FURUKAWA, S

机构：

[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 02期

关键词：

CALCIUM COMPOUNDS - MICROSCOPES; ELECTRON - Applications - MOLECULAR BEAM EPITAXY - SEMICONDUCTING SILICON - SUBSTRATES;

D O I：

10.1143/JJAP.25.L139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF//2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures ( less than equivalent to 600 degree C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.

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页码：L139 / L141

页数：3

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