共 21 条
[1]
ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON
[J].
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS,
1972, 5 (04)
:379-&
[2]
BONCHBRUEVICH VL, 1977, PHYSICS SEMICONDUCTO
[5]
EMTSEV VV, 1981, IMPURITIES POINT DEF
[6]
GUBSKAYA VI, 1982, FIZ TEKH POLUPROV, V16, P95
[8]
KAZAKEVICH LA, 1980, FIZ TEKH POLUPROV, V14, P124
[9]
KONOPLEVA RF, 1971, FEATURES SEMICONDUCT
[10]
INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1975, 8 (02)
:236-242