PARAMETER EXTRACTION FOR BIPOLAR-TRANSISTORS

被引:10
作者
PARK, JS
NEUGROSCHEL, A
机构
关键词
D O I
10.1109/16.21183
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:88 / 95
页数:8
相关论文
共 21 条
[1]   TRANSITION REGION CAPACITANCE OF DIFFUSED P-N JUNCTIONS [J].
CHAWLA, BR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :178-&
[2]   ERROR MINIMIZATION IN MEASUREMENT OF BIPOLAR COLLECTOR AND EMITTER RESISTANCES [J].
CHOMA, J .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) :318-322
[3]   TWO-DIMENSIONAL DEVICE SIMULATION PROGRAM - 2DP [J].
GAUR, SP ;
HABITZ, PA ;
PARK, YJ ;
COOK, RK ;
HUANG, YS ;
WAGNER, LF .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :242-251
[4]  
Getreu I., 1976, MODELING BIPOLAR TRA
[5]   BASE RESISTANCE OF BIPOLAR-TRANSISTORS FROM LAYOUT DETAILS INCLUDING 2 DIMENSIONAL EFFECTS AT LOW CURRENTS AND LOW-FREQUENCIES [J].
HEBERT, F ;
ROULSTON, DJ .
SOLID-STATE ELECTRONICS, 1988, 31 (02) :283-290
[7]   COMPUTER-AIDED DETERMINATION OF EMITTER AND COLLECTOR RESISTANCES OF INTEGRATED BIPOLAR-TRANSISTORS [J].
INCECIK, AZ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (06) :1108-1111
[8]  
LARRY JE, 1985, IEEE T ELECTRON DEV, V32, P2503
[9]   FORWARD-VOLTAGE CAPACITANCE AND THICKNESS OF P-N-JUNCTION SPACE-CHARGE REGIONS [J].
LIOU, JJ ;
LINDHOLM, FA ;
PARK, JS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1571-1579
[10]  
LIOU JJ, 1976, J APPL HSY, V62, P3853