GRADED-BAND-GAP PGA1-XALXAS-NGAAS HETEROJUNCTION SOLAR CELLS

被引:68
作者
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构
[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN
关键词
D O I
10.1063/1.322083
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3542 / 3546
页数:5
相关论文
共 9 条
[1]  
Bardeen J., 1954, P ATLANTIC CITY PHOT
[2]   VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
CASEY, HC ;
MILLER, BI ;
PINKAS, E .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287
[3]   CALCULATED EFFICIENCIES OF PRACTICAL GAAS AND SI SOLAR CELLS INCLUDING EFFECT OF BUILT-IN ELECTRIC FIELDS [J].
ELLIS, B ;
MOSS, TS .
SOLID-STATE ELECTRONICS, 1970, 13 (01) :1-+
[4]   GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS [J].
HOVEL, HJ ;
WOODALL, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1246-1252
[5]   BARRIER DETERMINATIONS ON GE-ALX GA1-XAS AND GAAS-ALX GA1-XAS P-N HETEROJUNCTIONS [J].
HOWARTH, DS ;
FEUCHT, DL .
APPLIED PHYSICS LETTERS, 1973, 23 (07) :365-367
[6]   ELECTRON DIFFUSION LENGTHS IN GE-DOPED GAALAS [J].
KAWAKAMI, T ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) :151-152
[7]   QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE [J].
VILMS, J ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2815-&
[8]   LIMITATIONS AND POSSIBILITIES FOR IMPROVEMENT OF PHOTOVOLTAIC SOLAR ENERGY CONVERTERS .1. CONSIDERATIONS FOR EARTHS SURFACE OPERATION [J].
WOLF, M .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (07) :1246-1263
[9]   ISOTHERMAL SOLUTION MIXING GROWTH OF THIN GA1-XALXAS LAYERS [J].
WOODALL, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :150-&