SILICON HEAVILY DOPED BY ENERGETIC CESIUM IONS

被引:39
作者
MCCALDIN, JO
WIDMER, AE
机构
关键词
D O I
10.1016/0022-3697(63)90020-9
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1073 / &
相关论文
共 31 条
[1]   DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J].
ALVAGER, T ;
HANSEN, NJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) :567-&
[2]   BOILING WATER OXIDATION RATES ON SILICON [J].
BECK, JW .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2391-&
[3]  
BREDOV MM, 1957, DOKL AKAD NAUK SSSR+, V113, P795
[4]  
BREDOV MM, 1962, SOV PHYS-SOL STATE, V4, P409
[5]  
BREDOV MM, 1961, SOV PHYS-SOL STATE, V3, P195
[6]  
BREDOV MM, 1958, SOV PHYS-TECH PHYS, V3, P228
[7]   ON THE KINETICS AND MECHANISM OF THE PRECIPITATION OF LITHIUM FROM GERMANIUM [J].
CARTER, JR ;
SWALIN, RA .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1191-1200
[8]   EFFECTS PRODUCED BY THE IONIC BOMBARDMENT OF GERMANIUM [J].
CUSSINS, WD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (04) :213-222
[9]   RANGE OF CS137 IONS OF KEV ENERGIES IN GERMANIUM [J].
DAVIES, JA ;
SIMS, G ;
MCINTYRE, JD .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1962, 40 (08) :1605-&
[10]   THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J].
DAVIES, JA ;
MCINTYRE, JD ;
CUSHING, RL ;
LOUNSBURY, M .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09) :1535-1546