INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS

被引：53

作者：

HURWITZ, CE ^{[1
]}

ROSSI, JA ^{[1
]}

HSIEH, JJ ^{[1
]}

WOLFE, CM ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 04期

关键词：

D O I：

10.1063/1.88408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：241 / 243

页数：3

相关论文

共 18 条

[11] SCHOTTKY-BARRIER IN XGA1-X AS ALLOY AVALANCHE PHOTODIODES FOR 1.06 MUM
STILLMAN, GE
WOLFE, CM
FOYT, AG
LINDLEY, WT
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (01) : 8 - 10
[12] ELECTROABSORPTION AVALANCHE PHOTODIODES
STILLMAN, GE
WOLFE, CM
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (11) : 671 - 673
[13] STILLMAN GE, UNPUBLISHED
[14] DISTRIBUTED FEEDBACK GAAS HOMOJUNCTION INJECTION LASER
STOLL, HM
SEIB, DH
[J]. APPLIED OPTICS, 1974, 13 (09) : 1981 - 1982
[15] MULTI-HETERO-ALGAAS LASER WITH INTEGRATED TWIN GUIDE
SUEMATSU, Y
YAMADA, M
HAYASHI, K
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 208 - 208
[16] SUEMATSU Y, 1974, IEEE INT LASER C ATL
[17] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS
TARUI, Y
KOMIYA, Y
HARADA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 118 - &
[18] WANG S, 1974, IEEE J QUANTUM ELECT, VQE10, P413, DOI 10.1109/JQE.1974.1068152