A DEGRADATION RATE STUDY OF MBE-GROWN HIGH-POWER ALGAAS LASER-DIODES

被引：5
|
作者：
CHALY, VP
ETINBERG, MI
FOKIN, GA
KARPOV, SY
MYACHIN, VE
OSTROVSKY, AY
POGORELSKY, YV
RUSANOVICH, IY
SOKOLOV, IA
SHCURKO, AP
STRUGOV, NA
TERMARTIROSYAN, AL
机构：
[1] Adv. Technol. Center, St. Petersburg
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 04期
关键词：
D O I：
10.1088/0268-1242/9/4/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700-degrees-C. A further reduction in the degradation rate may be achieved by using a ridge-type stripe-array contact instead of a broad-area contact. The percentage of diodes with a lifetime exceeding 2500 hours (at P(out) congruent-to 2 mW mum-1 per facet) was four times larger for the former laser than for the latter.
引用
收藏
页码：345 / 348
页数：4
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