ANOMALOUS TEMPERATURE-DEPENDENCE OF SI-29 NMR IN HEAVILY PHOSPHORUS DOPED SILICON

被引：1
|
作者：
IKEHATA, S [1 ]
IKEGAMI, K [1 ]
KOBAYASHI, S [1 ]
机构：
[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期
关键词：
D O I：
10.1016/0038-1101(85)90237-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：208 / 208
页数：1
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