ULTRAVIOLET LIGHT-EMITTING DIODE OF A CUBIC BORON-NITRIDE PN JUNCTION MADE AT HIGH-PRESSURE

被引：170

作者：

MISHIMA, O

ERA, K

TANAKA, J

YAMAOKA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：962 / 964

页数：3

共 10 条

[1]

CHRENKO RM, 1974, SOLID STATE COMMUN, V14, P511, DOI 10.1016/0038-1098(74)90978-8

[2] A MINIMAL BASIS SEMI-ABINITIO APPROACH TO THE BAND STRUCTURES OF SEMICONDUCTORS [J].

HUANG, MZ ;

CHING, WY .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (08) :977-995

[3] CRYSTAL-GROWTH OF CUBIC BORON-NITRIDE BY TEMPERATURE DIFFERENCE METHOD AT APPROXIMATELY-55-KBAR AND APPROXIMATELY-1800-DEGREES-C [J].

MISHIMA, O ;

YAMAOKA, S ;

FUKUNAGA, O .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2822-2825

[4] HIGH-TEMPERATURE CUBIC BORON-NITRIDE P-N-JUNCTION DIODE MADE AT HIGH-PRESSURE [J].

MISHIMA, O ;

TANAKA, J ;

YAMAOKA, S ;

FUKUNAGA, O .

SCIENCE, 1987, 238 (4824) :181-183

[5]

MISHIMA O, UNPUB

[6] HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS [J].

PALMOUR, JW ;

KONG, HS ;

DAVIS, RF .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2028-2030

[7] ULTRAVIOLET ELECTROLUMINESCENCE IN AIN [J].

RUTZ, RF .

APPLIED PHYSICS LETTERS, 1976, 28 (07) :379-381

[8] PREPARATION OF SEMICONDUCTING CUBIC BORON NITRIDE [J].

WENTORF, RH .

JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (08) :1990-&

[9] ELECTRONIC AND STRUCTURAL-PROPERTIES OF BN AND BP [J].

WENTZCOVITCH, RM ;

CHANG, KJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1986, 34 (02) :1071-1079

[10] ABINITIO SELF-CONSISTENT STUDY OF ELECTRONIC-STRUCTURE AND PROPERTIES OF CUBIC BORON-NITRIDE [J].

ZUNGER, A ;

FREEMAN, AJ .

PHYSICAL REVIEW B, 1978, 17 (04) :2030-2042

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