GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS

被引：95
作者：
HEIBLUM, M
MENDEZ, EE
OSTERLING, L
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.332015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6982 / 6988
页数：7
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