GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS

被引：95
|
作者：
HEIBLUM, M
MENDEZ, EE
OSTERLING, L
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.332015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6982 / 6988
页数：7
相关论文
共 50 条
  • [1] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    DINGLE, R
    WEISBUCH, C
    STORMER, HL
    MORKOC, H
    CHO, AY
    APPLIED PHYSICS LETTERS, 1982, 40 (06) : 507 - 510
  • [2] HIGH-PURITY MOLECULAR-BEAM EPITAXY GROWN ALGAAS
    CUNNINGHAM, JE
    TSANG, WT
    CHIU, TH
    SCHUBERT, EF
    DITZENBERGER, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 761 - 761
  • [3] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    FRAHM, RE
    APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
  • [4] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    TEMKIN, H
    BRENNAN, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C233 - C233
  • [5] HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, WI
    MARKS, RF
    VINA, L
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 937 - 939
  • [6] EFFECT OF ARSENIC SOURCE ON THE GROWTH OF HIGH-PURITY GAAS BY MOLECULAR-BEAM EPITAXY
    CHAND, N
    MILLER, RC
    SERGENT, AM
    SPUTZ, SK
    LANG, DV
    APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1721 - 1723
  • [7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY ALGAAS
    CUNNINGHAM, JE
    TSANG, WT
    CHIU, TH
    SCHUBERT, EF
    APPLIED PHYSICS LETTERS, 1987, 50 (12) : 769 - 771
  • [8] SPECTROSCOPY OF DONORS IN HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LOW, TS
    STILLMAN, GE
    CHO, AY
    MORKOC, H
    CALAWA, AR
    APPLIED PHYSICS LETTERS, 1982, 40 (07) : 611 - 613
  • [9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS
    MCCOLLUM, MJ
    SZAFRANEK, I
    PLANO, MA
    JACKSON, SL
    STOCKMAN, SA
    STILLMAN, GE
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 14 - 15
  • [10] CHARACTERIZATION OF HIGH-PURITY GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY FROM A SOLID AS CRACKER
    CHOW, R
    FERNANDEZ, R
    ATCHLEY, D
    CHAN, K
    BLISS, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 163 - 167
12345