GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS

被引：95
作者：
HEIBLUM, M
MENDEZ, EE
OSTERLING, L
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.332015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6982 / 6988
页数：7
相关论文
共 42 条
[1]  
ALMASSY RJ, 1979, I PHYSICS C SERIES, V45, P190
[2]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[3]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[4]   PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS [J].
BALLINGALL, JM ;
COLLINS, DM .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :341-345
[5]   LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].
BRIONES, F ;
COLLINS, DM .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866
[6]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[7]   APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J].
CASEY, HC ;
CHO, AY ;
BARNES, PA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :467-470
[8]   THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].
CHAI, YG ;
WOOD, CEC ;
CHOW, R .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803
[9]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[10]   INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC ;
RADICE, C ;
FOY, PW .
ELECTRONICS LETTERS, 1980, 16 (02) :72-74
12345