RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB

被引：25
作者：
CHANG, R
GODDARD, WA
机构：
来源：
SURFACE SCIENCE | 1984年 / 144卷 / 2-3期
关键词：
D O I：
10.1016/0039-6028(84)90103-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：311 / 320
页数：10
相关论文
共 24 条
[1]  
ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6
[2]   RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].
BARTON, JJ ;
GODDARD, WA ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185
[3]   SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB [J].
BERES, RP ;
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 26 (10) :5702-5705
[4]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[5]   ATOMIC GEOMETRY OF GASB(110) - DETERMINATION VIA ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY ANALYSIS [J].
DUKE, CB ;
PATON, A ;
KAHN, A .
PHYSICAL REVIEW B, 1983, 27 (06) :3436-3444
[6]   SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110) [J].
DUKE, CB ;
MEYER, RJ ;
PATON, A ;
YEH, JL ;
TSANG, JC ;
KAHN, A ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :501-505
[7]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM INAS(110) [J].
DUKE, CB ;
PATON, A ;
KAHN, A ;
BONAPACE, CR .
PHYSICAL REVIEW B, 1983, 27 (10) :6189-6198
[8]   DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1981, 24 (02) :562-573
[9]   THE ATOMIC GEOMETRY OF GAAS(110) REVISITED [J].
DUKE, CB ;
RICHARDSON, SL ;
PATON, A ;
KAHN, A .
SURFACE SCIENCE, 1983, 127 (02) :L135-L143
[10]   STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS [J].
DUKE, CB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :732-735
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