INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY

被引：18

作者：

DOBBS, BC ^{[1
]}

ANDERSON, WJ ^{[1
]}

PARK, YS ^{[1
]}

机构：

[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5052 / 5056

页数：5

共 20 条

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[2] NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS [J].

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[3]

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[4]

Carter G., 1971, ION IMPLANTATION, P261

[5] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[6]

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[7] OPTICAL RECTIFICATION DUE TO FREE CARRIERS IN GALLIUM-PHOSPHIDE [J].

GIBSON, AF ;

KIMMITT, MF ;

KOTHARI, S ;

HATCH, CB ;

SERAFETINIDES, A .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :36-37

[8] ELECTRIC FIELDS PRODUCED BY PROPAGATION OF PLANE COHERENT ELECTROMAGNETIC RADIATION IN A STRATIFIED MEDIUM [J].

HANSEN, WN .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (03) :380-&

[9]

Haskell JD, 1971, ION IMPLANTATION SEM, P193

[10] ZINC ION-IMPLANTATION OF SULFUR-DOPED GAP [J].

HEMENGER, PM ;

DOBBS, BC .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :462-464

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