SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA

被引：53

作者：

LEE, YH

CHEN, MM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.331774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5966 / 5973

页数：8

共 18 条

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[8] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J].

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