EPITAXIAL HETEROSTRUCTURES YBA2CU3O7-DELTA/KTAO3 FOR MICROWAVE APPLICATIONS

被引：17

作者：

BOIKOV, YA

IVANOV, ZG

VASILIEV, AL

PRONIN, I

OLSSON, E

CLAESON, T

机构：

[1] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA

[2] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

[3] GOTHENBURG UNIV,S-41296 GOTHENBURG,SWEDEN

[4] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW 117333,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Combinations of high T-C superconducting and ferroelectric films may give rise to tunable, high-Q microwave components. c-axis oriented YBa2Cu3O7-delta films were grown by laser ablation on (001) and vicinically cut KTaO3 substrates and studied by x-ray diffraction and electron microscopy. Competitive superconducting properties were registered. YBa2Cu3O7-delta/KTaO3/YB2Cu3O7-delta trilayers were deposited on silicon-on-sapphire buffered by CeO2/Y-ZrO2. The dielectric permittivity of KTO3 at 15-100 K decreased considerably when the layer was polarized by a dc voltage. A loss factor tan delta=0.007 was measured at 100 kHz and T=50-100 K. (C) 1995 American Institute of Physics.

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页码：2708 / 2710

页数：3

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