FABRICATION OF SIC FILMS ON SI(100) USING A C-60 MOLECULAR SOURCE

被引：9

作者：

CHEN, D

WORKMAN, R

SARID, D

机构：

[1] Optical Sciences Center, University of Arizona

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 12期

关键词：

SILICON CARBIDE; THICK FILMS; VACUUM DEPOSITION;

D O I：

10.1049/el:19940683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

70nm thick SiC films have been fabricated on Si(100) wafer under ultrahigh vacuum conditions, by depositing C60 molecules on substrates held at 900-degrees-C. The composition and morphology of the films have been measured using infra-red spectroscopy and atomic force microscopy.

引用

页码：1007 / 1008

页数：2

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