THE INFLUENCE OF THE TIN-OXIDE DEPOSITION TECHNIQUE ON THE SENSITIVITY TO CO

被引:13
作者
HORRILLO, MC [1 ]
GUTIERREZ, J [1 ]
ARES, L [1 ]
ROBLA, JI [1 ]
SAYAGO, I [1 ]
GETINO, J [1 ]
AGAPITO, JA [1 ]
机构
[1] UNIV COMPLUTENSE MADRID,FAC CIENCIAS FIS,DEPT ELECTR,E-28040 MADRID,SPAIN
关键词
CARBON MONOXIDE SENSORS; TIN OXIDE;
D O I
10.1016/0925-4005(95)85109-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The sensor parameters for CO detection on semiconductor films are strongly dependent on the him-preparation techniques. This is observed for semiconductor films prepared by sputtering and screen-printing. The influence of sensor-film porosity on the sensitivity to CO has also been observed. The effect of catalysts on semiconductor sensors combines the catalytic activity of the metals with the surface properties of the semiconductor oxides. It is very important that the catalyst is highly dispersed on the particles of the semiconductor and that the added quantity is adequate. We have studied the effect of catalysts (Pt and Pd) on films prepared by reactive sputtering and screen-printing by analysing their respective roles. Depending on whether the catalyst is Pt or Pd, the catalytic mechanism is different. With Pt the effect is purely chemical, whereas with Pd the effect is electronic. Surface analysis techniques (GAXRD, XPS, EDX) have been used to compare the two different preparation techniques with regard to thickness, composition and morphology.
引用
收藏
页码:507 / 511
页数:5
相关论文
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