THERMAL-STABILITY OF IMPLANTED DOPANTS IN GAN

Results are reported of measurements of depth profiles and stability against redistribution with annealing up to 800 or 900°C, for implanted Be, C, Mg, Si, S, Zn, Ge, and Se as dopants in GaN. The results confirm the high-temperature stability of dopants in this material up to temperatures that vary from 600 to 900°C. S redistributes for temperatures above 600°C, and Zn and Se, for temperatures above 800°C. All of the other elements are stable to 900°C. These results indicate that direct implantation of dopants rather than masked diffusion will probably be necessary to define selective area doping of III-V nitride device structures based on these results for GaN.© 1995 American Institute of Physics.