TAPERED THICKNESS MQW WAVE-GUIDE BH MQW LASERS

被引：70
作者：
KOBAYASHI, H
EKAWA, M
OKAZAKI, N
AOKI, O
OGITA, S
SODA, H
机构：
[1] Fujitsu Laboratories Ltd., Atsugi, Kanagawa
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期
关键词：
D O I：
10.1109/68.324674
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose and demonstrate a novel 1.3 mum InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8-degrees and 8.0-degrees, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA.
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收藏
页码：1080 / 1081
页数：2
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