SIMULATION OF A SUBHARMONIC EXCITATION OF SERIES INTEGRATED RESONANT-TUNNELING DIODES

被引:4
作者
SUN, RH
PAN, DS
ITOH, T
机构
[1] Electrical Engineering Department, University of California, Los Angeles, CA
关键词
D O I
10.1109/75.382373
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A subharmonic pulse excitation of an oscillator of series-integrated RTD's is considered and simulated. Linearized considerations are used to analyze the nonlinear system dominated by two major frequencies. A voltage-dependent current source is adopted to separate the input and output power for convenient simulation. Simulations show, for example, a 100-GHz integrated RTD oscillator can be excited by a 50-GHz pulse with 1-ns decay time without the dc instability problem, while a voltage ramp of 1-ns rise or fill time is far too slow to initiate such an oscillator.
引用
收藏
页码:18 / 20
页数:3
相关论文
共 50 条
[41]   3-DIMENSIONAL SCATTERING-ASSISTED TUNNELING IN RESONANT-TUNNELING DIODES [J].
ROBLIN, P ;
LIOU, WR .
PHYSICAL REVIEW B, 1993, 47 (04) :2146-2161
[42]   FREQUENCY CAPABILITY OF STRAINED ALAS/INGAAS RESONANT-TUNNELING DIODES [J].
MOUNAIX, P ;
LHEURETTE, E ;
MOLLOT, F ;
LIPPENS, D .
ELECTRONICS LETTERS, 1995, 31 (17) :1508-1510
[43]   EFFECT OF MASS DISCONTINUITY IN THE WIGNER THEORY OF RESONANT-TUNNELING DIODES [J].
SHIH, JJ ;
HUANG, HC ;
WU, GY .
PHYSICAL REVIEW B, 1994, 50 (04) :2399-2405
[44]   OBSERVATION OF RANDOM-TELEGRAPH NOISE IN RESONANT-TUNNELING DIODES [J].
NG, SH ;
SURYA, C ;
BROWN, ER ;
MAKI, PA .
APPLIED PHYSICS LETTERS, 1993, 62 (18) :2262-2264
[45]   RESONANT ENHANCEMENT OF TERAHERTZ DYNAMICS IN DOUBLE-BARRIER RESONANT-TUNNELING DIODES [J].
SUGIMURA, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) :512-514
[46]   Terahertz oscillations in semiconducting carbon nanotube resonant-tunneling diodes [J].
Dragoman, D ;
Dragoman, M .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4) :282-289
[47]   Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel [J].
Vetrova, Natalia ;
Kuimov, Evgeny ;
Sinyakin, Vladimir ;
Meshkov, Sergey ;
Makeev, Mstislav ;
Shashurin, Vasiliy .
SENSORS, 2023, 23 (18)
[48]   HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES [J].
LU, XJ ;
RHODES, D ;
PERLMAN, BS .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2908-2913
[49]   Operation of resonant-tunneling diodes beyond resonant-state-lifetime limit [J].
Feiginov, Michael N. ;
Chowdhury, Dibakar Roy .
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[50]   STATIC AND DYNAMIC ELECTRON-TRANSPORT IN RESONANT-TUNNELING DIODES [J].
TSUCHIYA, H ;
OGAWA, M ;
MIYOSHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03) :745-750