SIMULATION OF A SUBHARMONIC EXCITATION OF SERIES INTEGRATED RESONANT-TUNNELING DIODES

被引：4

作者：

SUN, RH

PAN, DS

ITOH, T

机构：

[1] Electrical Engineering Department, University of California, Los Angeles, CA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 01期

关键词：

D O I：

10.1109/75.382373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A subharmonic pulse excitation of an oscillator of series-integrated RTD's is considered and simulated. Linearized considerations are used to analyze the nonlinear system dominated by two major frequencies. A voltage-dependent current source is adopted to separate the input and output power for convenient simulation. Simulations show, for example, a 100-GHz integrated RTD oscillator can be excited by a 50-GHz pulse with 1-ns decay time without the dc instability problem, while a voltage ramp of 1-ns rise or fill time is far too slow to initiate such an oscillator.

引用

收藏

页码：18 / 20

页数：3

相关论文

共 50 条

[31] Comparison of bistable circuits based on resonant-tunneling diodes [J].

González, AF ;

Mazumder, P .

16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, :493-498

[32] EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES [J].

JOGAI, B .

SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (04) :383-385

[33] Carbon nanotube resonant-tunneling diodes as terahertz oscillators [J].

Dragoman, M ;

Dragoman, D .

2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, :75-78

[34] Large-signal dynamics of resonant-tunneling diodes [J].

Ourednik, P. ;

Picco, G. ;

Nguyen, D. Tuan ;

Spudat, C. ;

Feiginov, M. .

JOURNAL OF APPLIED PHYSICS, 2023, 133 (01)

[35] RESONANT-TUNNELING DIODES AS SOURCES FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS [J].

BOUREGBA, R ;

VANBESIEN, O ;

MOUNAIX, P ;

LIPPENS, D ;

PALMATEER, L ;

PERNOT, JC ;

BEAUDIN, G ;

ENCRENAZ, P ;

BOCKENHOFF, E ;

NAGLE, J ;

BOIS, P ;

CHEVOIR, F ;

VINTER, B .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (11) :2025-2027

[36] Effect of the device size on the performance of resonant-tunneling diodes [J].

Figielski, T ;

Morawski, A ;

Pelya, O ;

Wosinski, T ;

Makosa, A ;

Tkaczyk, Z ;

Dobrowolski, W ;

Karczewski, G ;

Kosiel, K ;

Dobrzanski, L .

EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, :55-59

[37] Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes [J].

Li, Mengwei ;

Deng, Tao ;

Du, Kang ;

Chu, WeiHang ;

Liu, Jun ;

Chen, Houjin ;

Liu, Zewen .

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (01)

[38] THE EFFECT OF GROWTH TEMPERATURE ON ALAS GAAS RESONANT-TUNNELING DIODES [J].

FORSTER, A ;

LANGE, J ;

GERTHSEN, D ;

DIEKER, C ;

LUTH, H .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (01) :175-178

[39] A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES [J].

FOBELETS, K ;

VOUNCKX, R ;

BORGHS, G .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) :123-128

[40] FABRICATION OF RESONANT-TUNNELING OPTICAL BISTABLE LASER-DIODES [J].

KAWAMURA, Y ;

ASAI, H ;

IWAMURA, H .

ELECTRONICS LETTERS, 1994, 30 (03) :225-227

← 1 2 3 4 5 →