HIGH ELECTRIC-FIELD APPROXIMATION TO CHARGE TRANSPORT IN SEMICONDUCTOR-DEVICES

被引：28
作者：
DMITRUK, P
SAUL, A
REYNA, LG
机构：
[1] IBM CORP,COMP RES & ADV APPLICAT GRP,RA-1300 BUENOS AIRES,ARGENTINA
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED MATHEMATICS LETTERS | 1992年 / 5卷 / 03期
关键词：
D O I：
10.1016/0893-9659(92)90049-F
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We consider the Boltzmann equation describing the charge transport in semiconductor devices, including the scattering of electrons with acoustic and optical phonons. Taking into account that at a high electric field the scattering events are nearly elastic, we develop a formal expansion for the distribution function valid for general band structures.
引用
收藏
页码：99 / 102
页数：4
相关论文
共 7 条
[1]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[2]   INVESTIGATION OF NONLOCAL TRANSPORT PHENOMENA IN SMALL SEMICONDUCTOR-DEVICES [J].
GNUDI, A ;
ODEH, F ;
RUDAN, M .
EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1990, 1 (03) :307-312
[3]  
GNUDI A, 1991, SEP P SISDEP 91 C, P205
[4]   A PHYSICS-BASED ANALYTICAL NUMERICAL-SOLUTION TO THE BOLTZMANN TRANSPORT-EQUATION FOR USE IN DEVICE SIMULATION [J].
GOLDSMAN, N ;
HENRICKSON, L ;
FREY, J .
SOLID-STATE ELECTRONICS, 1991, 34 (04) :389-396
[5]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[6]   AN EFFICIENT SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION WHICH INCLUDES THE PAULI EXCLUSION-PRINCIPLE [J].
LIN, HC ;
GOLDSMAN, N .
SOLID-STATE ELECTRONICS, 1991, 34 (10) :1035-1048
[7]  
VENTURA D, IN PRESS APPL MATH L
1