HIGH ELECTRIC-FIELD APPROXIMATION TO CHARGE TRANSPORT IN SEMICONDUCTOR-DEVICES

被引：28
|
作者：
DMITRUK, P
SAUL, A
REYNA, LG
机构：
[1] IBM CORP,COMP RES & ADV APPLICAT GRP,RA-1300 BUENOS AIRES,ARGENTINA
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED MATHEMATICS LETTERS | 1992年 / 5卷 / 03期
关键词：
D O I：
10.1016/0893-9659(92)90049-F
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We consider the Boltzmann equation describing the charge transport in semiconductor devices, including the scattering of electrons with acoustic and optical phonons. Taking into account that at a high electric field the scattering events are nearly elastic, we develop a formal expansion for the distribution function valid for general band structures.
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页码：99 / 102
页数：4
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