PLASMA STIMULATED MOCVD OF GAAS

被引：35

作者：

HEINECKE, H ^{[1
]}

BRAUERS, A ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90308-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：241 / 249

页数：9

共 20 条

[1]

ARENS G, J CRYSTAL GROWTH

[2]

BALK P, J VACUUM SCI TECHNOL

[3]

BALK P, 1985, PHYSICAL PROBLEMS MI, P190

[4] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2757-2765

[5] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J].

FRAAS, LM ;

MCLEOD, PS ;

CAPE, JA ;

PARTAIN, LD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :490-496

[6] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J].

HARIU, T ;

TAKENAKA, K ;

SHIBUYA, S ;

KOMATSU, Y ;

SHIBATA, Y .

THIN SOLID FILMS, 1981, 80 (1-3) :235-239

[7]

HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928

[8] SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS [J].

HEINECKE, H ;

BRAUERS, A ;

GRAFAHREND, F ;

PLASS, C ;

PUTZ, N ;

WERNER, K ;

WEYERS, M ;

LUTH, H ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :303-309

[9] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J].

KAMON, K ;

TAKAGISHI, S ;

MORI, H .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :73-76

[10] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS ARSENIC [J].

KNIGHTS, JC ;

MAHAN, JE .

SOLID STATE COMMUNICATIONS, 1977, 21 (10) :983-986

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