MINORITY-CARRIER LIFETIME IN POLYCRYSTALLINE SEMICONDUCTORS - SOME ANALYTICAL CONSIDERATIONS

被引：1

作者：

PRASAD, B ^{[1
]}

RAVINDRA, NM ^{[1
]}

机构：

[1] POLITECN TORINO,DIPARTIMENTO FIS,I-10129 TORINO,ITALY

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1080/00207218608920794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed. The study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.

引用

页码：381 / 394

页数：14

共 9 条

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