INVESTIGATION OF TE AND TM POLARIZED LASER-EMISSION IN GAINP/ALGAINP LASERS BY GROWTH-CONTROLLED STRAIN

被引：10
作者：
BOERMANS, MJB
HAGEN, SH
VALSTER, A
FINKE, MN
VANDERHEYDEN, JMM
机构：
[1] Philips Research Laboratories, JA Eindhoven, PO Box 80.000
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 18期
关键词：
Semiconductor lasers;
D O I：
10.1049/el:19900922
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GalnP/AIGalnP double heterostructure lasers can be obtained with either TE or TM polarised emission. In addition it is shown that, by using appropriate samples, TE or TM lasing can be selected by changing the temperature or the cavity length. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1438 / 1439
页数：2
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