DETERMINATION OF OXYGEN IN SILICON BY PHOTON-ACTIVATION ANALYSIS FOR CALIBRATION OF THE INFRARED-ABSORPTION

被引：21

作者：

RATH, HJ ^{[1
]}

STALLHOFER, P ^{[1
]}

HUBER, D ^{[1
]}

SCHMITT, BF ^{[1
]}

机构：

[1] BUNDESANSTALT MAT PRUFUNG,D-1000 BERLIN 45,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115991

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1920 / 1922

页数：3

共 20 条

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[3]

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[4]

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[5]

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[6] METHOD TO MEASURE THE PRECIPITATED AND TOTAL OXYGEN CONCENTRATION IN SILICON [J].

JASTRZEBSKI, L ;

ZANZUCCHI, P ;

THEBAULT, D ;

LAGOWSKI, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1638-1641

[7] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[8] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].

KAISER, W ;

KECK, PH ;

LANGE, CF .

PHYSICAL REVIEW, 1956, 101 (04) :1264-1268

[9]

LAWRENCE JE, 1982, VLSI ELECTRONICS MIC, V5

[10]

LI Y, 1983, MATER LETT, P101

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