120-MW VERTICAL CAVITY SURFACE-EMITTING (VCSE) DIODE-LASERS

被引：0
|
作者：
ZINKIEWICZ, LM
BOTEZ, D
ROTH, TJ
MAWST, LJ
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A novel vertical-cavity surface-emitting (VCSE) diode laser structure grown by MOCVD is presented. By using a conductive semiconductor stack reflector as a rear mirror, junction-down mounting, and current confinement by back-biased junctions, power levels as high 120 mW pulsed have been achieved.
引用
收藏
页码：567 / 570
页数：4
相关论文
共 50 条
12345