TWINNING IN CDTE (111) FILMS ON (100) GAAS SUBSTRATES

被引：0
|
作者：
DVORETSKY, SA [1 ]
GUTAKOVSKY, AK [1 ]
KARASEV, VY [1 ]
KISELEV, NA [1 ]
SABININA, IV [1 ]
SIDOROV, YG [1 ]
STENIN, SI [1 ]
机构：
[1] ACAD SCI USSR, INST SEMICOND PHYS, NOVOSIBIRSK 630090, USSR
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Layer and interface structure of the (111)CdTe/(100)GaAs heterosystem was analyzed by HREM. The distribution of microtwins with a growing layer thickness was studied. It has been shown that a substrate surface inclination from the (100) plane around the [110] axis yields a reduction of the twin boundary density.
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页码：407 / 408
页数：2
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